BAS16WH6327
  • Share:

Infineon Technologies BAS16WH6327

Manufacturer No:
BAS16WH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BAS16WH6327 Datasheet
ECAD Model:
-
Description:
HIGH SPEED SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.03
5,152

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS16WH6327 BAS16WE6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Standard -
Voltage - DC Reverse (Vr) (Max) 80 V -
Current - Average Rectified (Io) 250mA (DC) -
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA -
Speed Fast Recovery =< 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 4 ns -
Current - Reverse Leakage @ Vr 1 µA @ 75 V -
Capacitance @ Vr, F 2pF @ 0V, 1MHz -
Mounting Type Surface Mount -
Package / Case SC-70, SOT-323 -
Supplier Device Package SOT-323 -
Operating Temperature - Junction 150°C (Max) -

Related Product By Categories

MMSD701T1G
MMSD701T1G
onsemi
DIODE SCHOTTKY 70V 200MA SOD123
NTE640
NTE640
NTE Electronics, Inc
R-SCHOTTKY 40V 2A DO214AA
LSIC2SD065A08A
LSIC2SD065A08A
Littelfuse Inc.
SIC SCHOTTKY DIODE 650V 8A TO220
ER504_R2_00001
ER504_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION SUPERF
ZLLS410TA
ZLLS410TA
Diodes Incorporated
DIODE SCHOTTKY 10V 750MA SOD323
DSA300I45NA
DSA300I45NA
IXYS
DIODE SCHOTTKY 45V 300A SOT227B
GI822-E3/54
GI822-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 5A P600
MBRM110LT3
MBRM110LT3
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
1N4937GPHE3/73
1N4937GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
GP30JHE3/73
GP30JHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
SF2002G C0G
SF2002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 20A TO220AB
FR304-AP
FR304-AP
Micro Commercial Co
DIODE GP 50V 3A DO201AD

Related Product By Brand

ESD3V3U1U02LSE6327XTSA1
ESD3V3U1U02LSE6327XTSA1
Infineon Technologies
TVS DIODE 3.3VWM 28VC TSSLP-2-1
ESD3V3S1B02LSE6327XTSA1
ESD3V3S1B02LSE6327XTSA1
Infineon Technologies
TVS DIODE 3.3VWM 6.8VC TSSLP-2-1
BAS 16 B5003
BAS 16 B5003
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
IRF530NL
IRF530NL
Infineon Technologies
MOSFET N-CH 100V 17A TO262
IPD03N03LB G
IPD03N03LB G
Infineon Technologies
MOSFET N-CH 30V 90A TO252-3
IRU431LCL5TR
IRU431LCL5TR
Infineon Technologies
IC VREF SHUNT ADJ 1% SOT23-5
CY25404ZXI216
CY25404ZXI216
Infineon Technologies
TSBU
CY8C3665PVA-080
CY8C3665PVA-080
Infineon Technologies
IC MCU 8BIT 32KB FLASH 48SSOP
CY8C3246LTI-121
CY8C3246LTI-121
Infineon Technologies
IC MCU 8BIT 64KB FLASH 48QFN
S29GL128S90FAI013
S29GL128S90FAI013
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
S29GL512T12DHVV23
S29GL512T12DHVV23
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64FBGA
S29GL064N90TFI033
S29GL064N90TFI033
Infineon Technologies
IC FLASH 64MBIT PARALLEL 48TSOP