BAS16WE6327
  • Share:

Infineon Technologies BAS16WE6327

Manufacturer No:
BAS16WE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BAS16WE6327 Datasheet
ECAD Model:
-
Description:
RECTIFIER DIODE, 0.25A, 80V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.02
1,158

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS16WE6327 BAS16WH6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type - Standard
Voltage - DC Reverse (Vr) (Max) - 80 V
Current - Average Rectified (Io) - 250mA (DC)
Voltage - Forward (Vf) (Max) @ If - 1.25 V @ 150 mA
Speed - Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 4 ns
Current - Reverse Leakage @ Vr - 1 µA @ 75 V
Capacitance @ Vr, F - 2pF @ 0V, 1MHz
Mounting Type - Surface Mount
Package / Case - SC-70, SOT-323
Supplier Device Package - SOT-323
Operating Temperature - Junction - 150°C (Max)

Related Product By Categories

MBR10150F_T0_00001
MBR10150F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
NRVBM110ET1G
NRVBM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
GL34G-E3/83
GL34G-E3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 500MA DO213
S4D
S4D
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
RS2MAHR3G
RS2MAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1.5A DO214AC
VS-18TQ035HN3
VS-18TQ035HN3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 18A TO220AC
VS-ETH1506SHM3
VS-ETH1506SHM3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO263AB
1N4003RL
1N4003RL
onsemi
DIODE GEN PURP 200V 1A DO41
DSA17-12A
DSA17-12A
IXYS
DIODE AVALANCHE 1.2KV 25A DO203
AU2PGHM3/86A
AU2PGHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.6A TO277A
SS210LHRTG
SS210LHRTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A SUB SMA
RBR2LAM60ATFTR
RBR2LAM60ATFTR
Rohm Semiconductor
AUTOMOTIVE SCHOTTKY BARRIER DIOD

Related Product By Brand

ESD18VU1B-02LSE6327
ESD18VU1B-02LSE6327
Infineon Technologies
TRANS VOLTAGE SUPPRESSOR DIODE
BB659CH7902XTSA1
BB659CH7902XTSA1
Infineon Technologies
DIODE VAR CAP 30V 20MA SCD80
IPS1031RTRRPBF
IPS1031RTRRPBF
Infineon Technologies
IC PWR SWITCH N-CHANNEL 1:1 DPAK
CY8C3245AXI-166T
CY8C3245AXI-166T
Infineon Technologies
IC MCU 8BIT 32KB FLASH 100TQFP
MB91F526KJBPMC1-GS-F4E1
MB91F526KJBPMC1-GS-F4E1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
CY62137FV30LL-45ZSXIT
CY62137FV30LL-45ZSXIT
Infineon Technologies
IC SRAM 2MBIT PARALLEL 44TSOP II
CY7C1354B-166BGC
CY7C1354B-166BGC
Infineon Technologies
IC SRAM 9MBIT PARALLEL 119PBGA
CY7C0852V-133AXI
CY7C0852V-133AXI
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 176TQFP
CY7C1543V18-333BZC
CY7C1543V18-333BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CYD18S36V18-200BBAXI
CYD18S36V18-200BBAXI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 256FBGA
CY7C1415KV18-333BZI
CY7C1415KV18-333BZI
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
FM21L16-60-TGTR
FM21L16-60-TGTR
Infineon Technologies
IC FRAM 2MBIT PARALLEL 44TSOP II