BAS116E6327HTSA1
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Infineon Technologies BAS116E6327HTSA1

Manufacturer No:
BAS116E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BAS116E6327HTSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 80V 250MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):1.5 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
Operating Temperature - Junction:150°C (Max)
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$0.37
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Similar Products

Part Number BAS116E6327HTSA1 BAS16E6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 1.5 µs 4 ns
Current - Reverse Leakage @ Vr 5 nA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23
Operating Temperature - Junction 150°C (Max) 150°C (Max)

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