AUIRLZ44Z
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Infineon Technologies AUIRLZ44Z

Manufacturer No:
AUIRLZ44Z
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRLZ44Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 51A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number AUIRLZ44Z AUIRLZ44ZL   AUIRLZ44ZS   AUIRFZ44Z  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel - - N-Channel
Technology MOSFET (Metal Oxide) - - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V - - 55 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc) 51A (Tc) 51A (Tc) 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 31A, 10V - - 13.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA - - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 5 V - - 43 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 25 V - - 1420 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 80W (Tc) - - 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB - TO-220
Package / Case TO-220-3 TO-220-3 - TO-220-3

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