AUIRLU3110Z
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Infineon Technologies AUIRLU3110Z

Manufacturer No:
AUIRLU3110Z
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRLU3110Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 42A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number AUIRLU3110Z AUIRLU3114Z   AUIRLR3110Z  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 40 V 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 130A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 38A, 10V 4.9mOhm @ 42A, 10V 14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA 2.5V @ 100µA 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V 56 nC @ 4.5 V 48 nC @ 4.5 V
Vgs (Max) - ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 25 V 3810 pF @ 25 V 3980 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 140W (Tc) 140W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package I-PAK PG-TO251-3 D-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

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