AUIRLU3110Z
  • Share:

Infineon Technologies AUIRLU3110Z

Manufacturer No:
AUIRLU3110Z
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRLU3110Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 42A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
199

Please send RFQ , we will respond immediately.

Similar Products

Part Number AUIRLU3110Z AUIRLU3114Z   AUIRLR3110Z  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 40 V 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 130A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 38A, 10V 4.9mOhm @ 42A, 10V 14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA 2.5V @ 100µA 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V 56 nC @ 4.5 V 48 nC @ 4.5 V
Vgs (Max) - ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 25 V 3810 pF @ 25 V 3980 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 140W (Tc) 140W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package I-PAK PG-TO251-3 D-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SI3442BDV-T1-E3
SI3442BDV-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 3A 6TSOP
IXFP5N100PM
IXFP5N100PM
IXYS
MOSFET N-CH 1000V 2.3A TO220
RJL6013DPP-00#T2
RJL6013DPP-00#T2
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
STB4NK60Z-1
STB4NK60Z-1
STMicroelectronics
MOSFET N-CH 600V 4A I2PAK
SPW55N80C3FKSA1
SPW55N80C3FKSA1
Infineon Technologies
MOSFET N-CH 800V 54.9A TO247-3
FQPF30N06L
FQPF30N06L
onsemi
MOSFET N-CH 60V 22.5A TO220F
STB46N60M6
STB46N60M6
STMicroelectronics
MOSFET N-CH 600V 36A D2PAK
IRF7458TR
IRF7458TR
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
NTD15N06L-001
NTD15N06L-001
onsemi
MOSFET N-CH 60V 15A IPAK
MTP20N15EG
MTP20N15EG
onsemi
MOSFET N-CH 150V 20A TO220AB
NVD5865NLT4G
NVD5865NLT4G
onsemi
MOSFET N-CH 60V 10A/46A DPAK
NP160N04TUJ-E2-AY
NP160N04TUJ-E2-AY
Renesas Electronics America Inc
TRANSISTOR

Related Product By Brand

BCR166E6327
BCR166E6327
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
BSZ040N04LSGATMA1
BSZ040N04LSGATMA1
Infineon Technologies
MOSFET N-CH 40V 18A/40A 8TSDSON
IPP80N06S209AKSA1
IPP80N06S209AKSA1
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
FF200R12KE3B2HOSA1
FF200R12KE3B2HOSA1
Infineon Technologies
IGBT MOD 1200V 295A 1050W
TC233LP32F200FACLXUMA1
TC233LP32F200FACLXUMA1
Infineon Technologies
IC MCU 32BIT 2MB FLASH 100TQFP
IRS21094SPBF
IRS21094SPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 14SOIC
AUIPS1051L
AUIPS1051L
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223
MB89636RPF-G-1366-BNDE1
MB89636RPF-G-1366-BNDE1
Infineon Technologies
IC MCU 8BIT 24KB MROM 64QFP
MB91F526KWBPMC-GS-F4K5E1
MB91F526KWBPMC-GS-F4K5E1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
MB95F816KPMC-G-SNE2
MB95F816KPMC-G-SNE2
Infineon Technologies
IC MCU 8BIT 36KB FLASH 64LQFP
CY7C425-20JXC
CY7C425-20JXC
Infineon Technologies
IC ASYNC FIFO MEM 1KX9 32-PLCC
S25FL164K0XMFB013
S25FL164K0XMFB013
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 8SOIC