AUIRLS8409-7P
  • Share:

Infineon Technologies AUIRLS8409-7P

Manufacturer No:
AUIRLS8409-7P
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRLS8409-7P Datasheet
ECAD Model:
-
Description:
AUIRLS8409 - 20V-40V N-CHANNEL A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:266 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:16488 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

-
448

Please send RFQ , we will respond immediately.

Similar Products

Part Number AUIRLS8409-7P AUIRFS8409-7P  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 240A (Tc) 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 0.75mOhm @ 100A, 10V 0.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 266 nC @ 4.5 V 460 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 16488 pF @ 25 V 13975 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 D2PAK (7-Lead)
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

Related Product By Categories

FDD6696
FDD6696
Fairchild Semiconductor
MOSFET N-CH 30V 13A/50A DPAK
FDU2572
FDU2572
Fairchild Semiconductor
MOSFET N-CH 150V 4A/29A IPAK
HUF75645S3ST_NL
HUF75645S3ST_NL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
STW26NM50
STW26NM50
STMicroelectronics
MOSFET N-CH 500V 30A TO247-3
SQJ186EP-T1_GE3
SQJ186EP-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 80 V (D-S)
DMN2320UFB4-7B
DMN2320UFB4-7B
Diodes Incorporated
MOSFET N-CH 20V 1A X2-DFN1006-3
IXTH3N200P3HV
IXTH3N200P3HV
IXYS
MOSFET N-CH 2000V 3A TO247
SIR890DP-T1-GE3
SIR890DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 50A PPAK SO-8
IXFN32N60
IXFN32N60
IXYS
MOSFET N-CH 600V 32A SOT227B
SI4362BDY-T1-GE3
SI4362BDY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 29A 8SO
IPD60R520C6BTMA1
IPD60R520C6BTMA1
Infineon Technologies
MOSFET N-CH 600V 8.1A TO252-3
FDB8443-F085
FDB8443-F085
onsemi
MOSFET N-CH 40V 25A TO263AB

Related Product By Brand

BSO150N03MDGXUMA1
BSO150N03MDGXUMA1
Infineon Technologies
MOSFET 2N-CH 30V 8A 8DSO
BSO303PH
BSO303PH
Infineon Technologies
7A, 30V, 0.021OHM, 2-ELEMENT, P
IRF1404PBF
IRF1404PBF
Infineon Technologies
MOSFET N-CH 40V 202A TO220AB
IPD90N06S4L03ATMA1
IPD90N06S4L03ATMA1
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
F450R12KS4B11BOSA1
F450R12KS4B11BOSA1
Infineon Technologies
IGBT MOD 1200V 70A 355W
IKD03N60RFAATMA1
IKD03N60RFAATMA1
Infineon Technologies
IGBT 600V 5A 53.6W TO252-3
SKB02N120ATMA1
SKB02N120ATMA1
Infineon Technologies
IGBT 1200V 6.2A 62W TO263-3-2
IRG4RC10STRL
IRG4RC10STRL
Infineon Technologies
IGBT 600V 14A 38W DPAK
S25FL128LAGBHI023
S25FL128LAGBHI023
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
CY7C2163KV18-550BZXI
CY7C2163KV18-550BZXI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
CY62146EV30LL-45ZSXAT
CY62146EV30LL-45ZSXAT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
CY9AF114LAPMC1-GNE2
CY9AF114LAPMC1-GNE2
Infineon Technologies
IC MCU 32BIT FLASH 64-LQFP