AUIRL7766M2TR
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Infineon Technologies AUIRL7766M2TR

Manufacturer No:
AUIRL7766M2TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
AUIRL7766M2TR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 10A DIRECTFET
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5305 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 62.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DirectFET™ Isometric M4
Package / Case:DirectFET™ Isometric M4
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Similar Products

Part Number AUIRL7766M2TR AUIRL7736M2TR  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 40 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 179A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 31A, 10V 3mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150µA 2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V 78 nC @ 4.5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 5305 pF @ 25 V 5055 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 62.5W (Tc) 2.5W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DirectFET™ Isometric M4 DirectFET™ Isometric M4
Package / Case DirectFET™ Isometric M4 DirectFET™ Isometric M4

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