AUIRFU540Z
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Infineon Technologies AUIRFU540Z

Manufacturer No:
AUIRFU540Z
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRFU540Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 35A IPAK
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:28.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number AUIRFU540Z AUIRFR540Z  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 28.5mOhm @ 21A, 10V 28.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 4V @ 50µA 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 59 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1690 pF @ 25 V 1690 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 91W (Tc) 91W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package I-PAK DPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

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