AUIRFU3607
  • Share:

Infineon Technologies AUIRFU3607

Manufacturer No:
AUIRFU3607
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRFU3607 Datasheet
ECAD Model:
-
Description:
MOSFET N CH 75V 56A I-PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3070 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
528

Please send RFQ , we will respond immediately.

Similar Products

Part Number AUIRFU3607 AUIRFS3607  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 46A, 10V 9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3070 pF @ 50 V 3070 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 140W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package I-PAK PG-TO263-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PJA3411_R1_00001
PJA3411_R1_00001
Panjit International Inc.
SOT-23, MOSFET
FDG361N
FDG361N
Fairchild Semiconductor
MOSFET N-CH 100V 600MA SC88
UPA2709AGR-E1-AT
UPA2709AGR-E1-AT
Renesas Electronics America Inc
MOSFET N-CH 30V 13A 8PSOP
STP24N60M6
STP24N60M6
STMicroelectronics
MOSFET N-CH 600V TO220
IPL60R105P7AUMA1
IPL60R105P7AUMA1
Infineon Technologies
MOSFET N-CH 650V 33A 4VSON
SIS890ADN-T1-GE3
SIS890ADN-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 7.6A/24.7A PPAK
AOWF11S60
AOWF11S60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 11A TO262F
HUF76419P3
HUF76419P3
onsemi
MOSFET N-CH 60V 29A TO220-3
BSP170PL6327HTSA1
BSP170PL6327HTSA1
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223-4
CSD16325Q5C
CSD16325Q5C
Texas Instruments
MOSFET N-CH 25V 33A/100A 8VSON
TPCA8055-H,LQ(M
TPCA8055-H,LQ(M
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 56A 8SOP
NTMFS4C35NT1G
NTMFS4C35NT1G
onsemi
MOSFET N-CH 30V 12.4A 5DFN

Related Product By Brand

IRDC3847
IRDC3847
Infineon Technologies
BOARD EVAL SUPIRBUCK FOR IR3847
IDW24G65C5BXKSA1
IDW24G65C5BXKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 12A TO247-3
IPB031N08N5ATMA1
IPB031N08N5ATMA1
Infineon Technologies
MOSFET N-CH 80V 120A D2PAK
IPS075N03LG
IPS075N03LG
Infineon Technologies
N-CHANNEL POWER MOSFET
IHW20N120R3FKSA1
IHW20N120R3FKSA1
Infineon Technologies
IGBT 1200V 40A 310W TO247-3
XC886C8FFI5VACFXUMA1
XC886C8FFI5VACFXUMA1
Infineon Technologies
IC MCU 8BIT 32KB FLASH 48TQFP
MB90F347UASPF-GE1
MB90F347UASPF-GE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CY91F525BSCPMC1-GSE2
CY91F525BSCPMC1-GSE2
Infineon Technologies
IC MCU 32BIT 832KB FLASH 64LQFP
MB89635RPMC-G-204-JNE1
MB89635RPMC-G-204-JNE1
Infineon Technologies
IC MCU 8BIT 16KB MROM 64QFP
CY7C1041CV33-10BAXA
CY7C1041CV33-10BAXA
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48FBGA
CY7C1393JV18-300BZXC
CY7C1393JV18-300BZXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
CYRF7936-40LTXC
CYRF7936-40LTXC
Infineon Technologies
IC RF TXRX+MCU ISM>1GHZ 40VFQFN