AUIRFS8405
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Infineon Technologies AUIRFS8405

Manufacturer No:
AUIRFS8405
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRFS8405 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:161 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5193 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):163W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number AUIRFS8405 AUIRFS8409   AUIRFSL8405   AUIRFS8407   AUIRFS8408   AUIRFU8405   AUIRFR8405   AUIRFS8403  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 195A (Tc) 120A (Tc) 195A (Tc) 195A (Tc) 100A (Tc) 100A (Tc) 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V 1.2mOhm @ 100A, 10V 2.3mOhm @ 100A, 10V 1.8mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V 1.98mOhm @ 90A, 10V 1.98mOhm @ 90A, 10V 3.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100µA 3.9V @ 250µA 3.9V @ 100µA 4V @ 150µA 3.9V @ 250µA 3.9V @ 100µA 3.9V @ 100µA 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 10 V 450 nC @ 10 V 161 nC @ 10 V 225 nC @ 10 V 324 nC @ 10 V 155 nC @ 10 V 155 nC @ 10 V 93 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5193 pF @ 25 V 14240 pF @ 25 V 5193 pF @ 25 V 7330 pF @ 25 V 10820 pF @ 25 V 5171 pF @ 25 V 5171 pF @ 25 V 3183 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 163W (Tc) 375W (Tc) 163W (Tc) 230W (Tc) 294W (Tc) 163W (Tc) 163W (Tc) 99W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Through Hole Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3 TO-262 PG-TO263-3 D2PAK I-PAK D-Pak PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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