AUIRFS8403
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Infineon Technologies AUIRFS8403

Manufacturer No:
AUIRFS8403
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRFS8403 Datasheet
ECAD Model:
-
Description:
AUIRFS8403 - 20V-40V N-CHANNEL A
Delivery:
Payment:
iso14001
iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3183 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):99W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number AUIRFS8403 AUIRFS8409   AUIRFU8403   AUIRFSL8403   AUIRFS8405   AUIRFS8407   AUIRFS8408   AUIRFR8403  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 123A (Tc) 195A (Tc) 100A (Tc) 123A (Tc) 120A (Tc) 195A (Tc) 195A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 70A, 10V 1.2mOhm @ 100A, 10V 3.1mOhm @ 76A, 10V 3.3mOhm @ 70A, 10V 2.3mOhm @ 100A, 10V 1.8mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V 3.1mOhm @ 76A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100µA 3.9V @ 250µA 3.9V @ 100µA 3.9V @ 100µA 3.9V @ 100µA 4V @ 150µA 3.9V @ 250µA 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 450 nC @ 10 V 99 nC @ 10 V 93 nC @ 10 V 161 nC @ 10 V 225 nC @ 10 V 324 nC @ 10 V 99 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3183 pF @ 25 V 14240 pF @ 25 V 3171 pF @ 25 V 3183 pF @ 25 V 5193 pF @ 25 V 7330 pF @ 25 V 10820 pF @ 25 V 3171 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 99W (Tc) 375W (Tc) 99W (Tc) 99W (Tc) 163W (Tc) 230W (Tc) 294W (Tc) 99W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole Through Hole Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3 I-PAK TO-262 PG-TO263-3 PG-TO263-3 D2PAK D-Pak
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-251-3 Short Leads, IPak, TO-251AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63

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