AUIRFS6535
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Infineon Technologies AUIRFS6535

Manufacturer No:
AUIRFS6535
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRFS6535 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 19A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:185mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2340 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number AUIRFS6535 AUIRFSL6535  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 11A, 10V 185mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 150µA 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 25 V 2340 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 210W (Tc) 210W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package PG-TO263-3 PG-TO262-3-901
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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