AUIRFP4310Z
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Infineon Technologies AUIRFP4310Z

Manufacturer No:
AUIRFP4310Z
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRFP4310Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 128A TO247AC
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:128A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6mOhm @ 77A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:188 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7120 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):278W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number AUIRFP4310Z AUIRFS4310Z  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 128A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 77A, 10V 6mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 188 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7120 pF @ 50 V 6860 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 278W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package PG-TO247-3 D2PAK
Package / Case TO-247-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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