AUIRFN8401TR
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Infineon Technologies AUIRFN8401TR

Manufacturer No:
AUIRFN8401TR
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRFN8401TR Datasheet
ECAD Model:
-
Description:
AUIRFN8401 - 20V-40V N-CHANNEL A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:84A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2170 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4.2W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number AUIRFN8401TR AUIRFN8405TR   AUIRFN8403TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 84A (Tc) 95A (Tc) 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 10V 2mOhm @ 50A, 10V 3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.9V @ 50µA 3.9V @ 100µA 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 117 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2170 pF @ 25 V 5142 pF @ 25 V 3174 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 4.2W (Ta), 63W (Tc) 3.3W (Ta), 136W (Tc) 4.3W (Ta), 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PQFN (5x6) PQFN (5x6) PG-TDSON-8-10
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerVDFN

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