AUIRFB8409
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Infineon Technologies AUIRFB8409

Manufacturer No:
AUIRFB8409
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRFB8409 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 195A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:450 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number AUIRFB8409 AUIRFB8405   AUIRFB8407  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 120A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 100A, 10V 2.5mOhm @ 100A, 10V 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA 3.9V @ 100µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 450 nC @ 10 V 161 nC @ 10 V 225 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14240 pF @ 25 V 5193 pF @ 25 V 7330 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 375W (Tc) 163W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3

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