AUIRF8736M2TR
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Infineon Technologies AUIRF8736M2TR

Manufacturer No:
AUIRF8736M2TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
AUIRF8736M2TR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 27A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 85A, 10V
Vgs(th) (Max) @ Id:3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:204 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6867 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DirectFET™ Isometric M4
Package / Case:DirectFET™ Isometric M4
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In Stock

$4.77
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Similar Products

Part Number AUIRF8736M2TR AUIRF7736M2TR  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 137A (Tc) 22A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 85A, 10V 3mOhm @ 65A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 204 nC @ 10 V 108 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6867 pF @ 25 V 4267 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 63W (Tc) 2.5W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DirectFET™ Isometric M4 DirectFET™ Isometric M4
Package / Case DirectFET™ Isometric M4 DirectFET™ Isometric M4

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