Infineon Technologies-AUIRF7732S2TR - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	6.95mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:	4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:	45 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1700 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 41W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DIRECTFET™ SC
Package / Case:	DirectFET™ Isometric SC

Infineon Technologies AUIRF7732S2TR