Infineon Technologies-AUIRF7675M2TR - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150 V
Current - Continuous Drain (Id) @ 25°C:	4.4A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	56mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	32 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1360 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.7W (Ta), 45W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DirectFET™ Isometric M2
Package / Case:	DirectFET™ Isometric M2

Infineon Technologies AUIRF7675M2TR