Infineon Technologies-AUIRF7665S2TR - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	4.1A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	62mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:	5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	13 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	515 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.4W (Ta), 30W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DIRECTFET SB
Package / Case:	DirectFET™ Isometric SB

Infineon Technologies AUIRF7665S2TR