AUIRF7379Q
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Infineon Technologies AUIRF7379Q

Manufacturer No:
AUIRF7379Q
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRF7379Q Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 30V 5.8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5.8A, 4.3A
Rds On (Max) @ Id, Vgs:45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:520pF @ 25V
Power - Max:2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number AUIRF7379Q AUIRF7309Q   AUIRF7319Q  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 5.8A, 4.3A 4A, 3A 6.5A, 4.9A
Rds On (Max) @ Id, Vgs 45mOhm @ 5.8A, 10V 50mOhm @ 2.4A, 10V 29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V 25nC @ 4.5V 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V 520pF @ 15V 650pF @ 25V
Power - Max 2.5W 1.4W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC

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