AUIRF4905
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Infineon Technologies AUIRF4905

Manufacturer No:
AUIRF4905
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRF4905 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 55V 74A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:74A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number AUIRF4905 AUIRF4905L   AUIRF4905S  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Last Time Buy
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 74A (Tc) 42A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 38A, 10V 20mOhm @ 42A, 10V 20mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V 3500 pF @ 25 V 3500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 200W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AB TO-262 D2PAK
Package / Case TO-220-3 TO-262 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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