AUIRF3808S
  • Share:

Infineon Technologies AUIRF3808S

Manufacturer No:
AUIRF3808S
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRF3808S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 106A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
346

Please send RFQ , we will respond immediately.

Similar Products

Part Number AUIRF3808S AUIRF3805S  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 55 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 82A, 10V 3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 290 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5310 pF @ 25 V 7960 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

SIHA17N80E-GE3
SIHA17N80E-GE3
Vishay Siliconix
N-CHANNEL 800V
NTLJS3180PZTBG
NTLJS3180PZTBG
onsemi
SMALL SIGNAL FIELD-EFFECT TRANSI
PJQ4408P-AU_R2_000A1
PJQ4408P-AU_R2_000A1
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
IPD90N06S407ATMA2
IPD90N06S407ATMA2
Infineon Technologies
MOSFET N-CH 60V 90A TO252-31
UF3C065040T3S
UF3C065040T3S
UnitedSiC
MOSFET N-CH 650V 54A TO220-3
PJF60R540E_T0_00001
PJF60R540E_T0_00001
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
IRFP22N60C3PBF
IRFP22N60C3PBF
Vishay Siliconix
MOSFET N-CH 650V 22A TO247-3
IRFS17N20DPBF
IRFS17N20DPBF
Infineon Technologies
MOSFET N-CH 200V 16A D2PAK
IRL3716PBF
IRL3716PBF
Infineon Technologies
MOSFET N-CH 20V 180A TO220AB
STW24NM65N
STW24NM65N
STMicroelectronics
MOSFET N-CH 650V 19A TO247-3
SSM3K302T(TE85L,F)
SSM3K302T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 3A TSM
3LN01M-TL-H
3LN01M-TL-H
onsemi
MOSFET N-CH 30V 150MA SC70/MCPH3

Related Product By Brand

IDH15S120A
IDH15S120A
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BBY5802LE6327
BBY5802LE6327
Infineon Technologies
VARIABLE CAPACITANCE DIODE
BFR720L3RHE6327XTSA1
BFR720L3RHE6327XTSA1
Infineon Technologies
RF TRANS NPN 4.7V 45GHZ TSLP-3
BFR740EL3E6829XTSA1
BFR740EL3E6829XTSA1
Infineon Technologies
RF BIP TRANSISTORS
BSC019N06NSATMA1
BSC019N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A TDSON-8 FL
IRFR3711
IRFR3711
Infineon Technologies
MOSFET N-CH 20V 100A DPAK
SAK-XC866L-1FRAAB
SAK-XC866L-1FRAAB
Infineon Technologies
XC800 I-FAMILY MICROCONTROLLER ,
S6E1A11B0AGP20000
S6E1A11B0AGP20000
Infineon Technologies
IC MCU 32BIT 56KB FLASH 32LQFP
MB90025FPMT-GS-337E1
MB90025FPMT-GS-337E1
Infineon Technologies
IC MCU 120LQFP
CY90F345CASPMC-GSE1
CY90F345CASPMC-GSE1
Infineon Technologies
IC MCU 16BIT 512KB FLASH 100LQFP
CY15B016Q-SXA
CY15B016Q-SXA
Infineon Technologies
IC FRAM 16KBIT SPI 20MHZ 8SOIC
CY7C1245KV18-400BZXI
CY7C1245KV18-400BZXI
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA