AUIRF3808S
  • Share:

Infineon Technologies AUIRF3808S

Manufacturer No:
AUIRF3808S
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AUIRF3808S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 106A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
346

Please send RFQ , we will respond immediately.

Similar Products

Part Number AUIRF3808S AUIRF3805S  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 55 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 82A, 10V 3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 290 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5310 pF @ 25 V 7960 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

DMN31D5UFZ-7B
DMN31D5UFZ-7B
Diodes Incorporated
MOSFET N-CH 30V 220MA 3DFN
BUK9535-100A,127
BUK9535-100A,127
NXP USA Inc.
MOSFET N-CH 100V 41A TO220AB
BUK661R8-30C,118
BUK661R8-30C,118
NXP USA Inc.
MOSFET N-CH 30V 120A D2PAK
DN3535N8-G
DN3535N8-G
Microchip Technology
MOSFET N-CH 350V 230MA TO243AA
PJL9409_R2_00001
PJL9409_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
HUF76432P3
HUF76432P3
Fairchild Semiconductor
MOSFET N-CH 60V 59A TO220-3
DMP6023LEQ-13
DMP6023LEQ-13
Diodes Incorporated
MOSFET P-CH 60V 7A SOT223 T&R
IRL3705ZS
IRL3705ZS
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
HUF76429D3S
HUF76429D3S
onsemi
MOSFET N-CH 60V 20A TO252AA
IPP080N06N G
IPP080N06N G
Infineon Technologies
MOSFET N-CH 60V 80A TO220-3
NTD78N03G
NTD78N03G
onsemi
MOSFET N-CH 25V 11.4A/78A DPAK
SI5415AEDU-T1-GE3
SI5415AEDU-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 25A PPAK

Related Product By Brand

BB 565 E7908
BB 565 E7908
Infineon Technologies
DIODE VAR CAP 30V 20MA SCD-80
IRFB4410PBF
IRFB4410PBF
Infineon Technologies
MOSFET N-CH 100V 88A TO220AB
IRF6636TRPBF
IRF6636TRPBF
Infineon Technologies
MOSFET N-CH 20V 18A DIRECTFET
IRFR2405TRR
IRFR2405TRR
Infineon Technologies
MOSFET N-CH 55V 56A DPAK
IRLR3714TRPBF
IRLR3714TRPBF
Infineon Technologies
MOSFET N-CH 20V 36A DPAK
BSP170PL6327HTSA1
BSP170PL6327HTSA1
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223-4
IRF3704ZSTRRPBF
IRF3704ZSTRRPBF
Infineon Technologies
MOSFET N-CH 20V 67A D2PAK
F423MR12W1M1PB11BPSA1
F423MR12W1M1PB11BPSA1
Infineon Technologies
MOSFET MODULE 1200V 4PACK
XC164CS32F20FBBAKXUMA1
XC164CS32F20FBBAKXUMA1
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100TQFP
IRU1030-33CDTR
IRU1030-33CDTR
Infineon Technologies
IC REG LINEAR 3.3V 3A DPAK
CY7C1514V18-250BZC
CY7C1514V18-250BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY9BF106NAPMC-G-JNE1
CY9BF106NAPMC-G-JNE1
Infineon Technologies
IC MEM MM MCU 100QFP