AUIRF3710ZS
  • Share:

Infineon Technologies AUIRF3710ZS

Manufacturer No:
AUIRF3710ZS
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRF3710ZS Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 59A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
547

Please send RFQ , we will respond immediately.

Similar Products

Part Number AUIRF3710ZS AUIRF3710Z  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 59A (Tc) 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 35A, 10V 18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 160W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package PG-TO263-3 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

Related Product By Categories

FQD4N50TF
FQD4N50TF
Fairchild Semiconductor
MOSFET N-CH 500V 2.6A DPAK
IPI60R385CP
IPI60R385CP
Infineon Technologies
N-CHANNEL POWER MOSFET
SIHP23N60E-BE3
SIHP23N60E-BE3
Vishay Siliconix
N-CHANNEL 600V
STD4N80K5
STD4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A DPAK
IPZA65R029CFD7XKSA1
IPZA65R029CFD7XKSA1
Infineon Technologies
650V FET COOLMOS TO247
IXTQ96N15P
IXTQ96N15P
IXYS
MOSFET N-CH 150V 96A TO3P
BUK7609-75A,118
BUK7609-75A,118
Nexperia USA Inc.
MOSFET N-CH 75V 75A D2PAK
SI4484EY-T1-E3
SI4484EY-T1-E3
Vishay Siliconix
MOSFET N-CH 100V 4.8A 8SO
IRLR8729PBF
IRLR8729PBF
Infineon Technologies
MOSFET N-CH 30V 58A D-PAK
NTMFS4846NT1G
NTMFS4846NT1G
onsemi
MOSFET N-CH 30V 12.7A/100A 5DFN
IRFR7546PBF
IRFR7546PBF
Infineon Technologies
MOSFET N-CH 60V 56A DPAK
TSM4N80CI C0G
TSM4N80CI C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 800V 4A ITO220AB

Related Product By Brand

ETD540N22P60HPSA1
ETD540N22P60HPSA1
Infineon Technologies
THYR / DIODE MODULE DK
T1220N26TOFVTXPSA1
T1220N26TOFVTXPSA1
Infineon Technologies
SCR MODULE 2800V 2625A DO200AC
IRFB3307PBF
IRFB3307PBF
Infineon Technologies
MOSFET N-CH 75V 130A TO220AB
BSC882N03LSGATMA1
BSC882N03LSGATMA1
Infineon Technologies
MOSFET N-CH 34V 8TDSON
IPS040N03LGAKMA1
IPS040N03LGAKMA1
Infineon Technologies
MOSFET N-CH 30V 90A TO251-3
DDB6U134N16RRBOSA1
DDB6U134N16RRBOSA1
Infineon Technologies
IGBT MOD 1600V 70A 500W
IKW30N65NL5
IKW30N65NL5
Infineon Technologies
IKW30N65 - DISCRETE IGBT WITH AN
IRGPC40U
IRGPC40U
Infineon Technologies
IGBT UFAST 600V 40A TO-247AC
SIGC81T60SNCX1SA1
SIGC81T60SNCX1SA1
Infineon Technologies
IGBT 3 CHIP 600V WAFER
IR21064STRPBF
IR21064STRPBF
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 14SOIC
TLE7230RAUMA1
TLE7230RAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:8 DSO-36
CY9BF306RBPMC-G-JNE2
CY9BF306RBPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 512KB FLASH 120LQFP