AUIRF3710ZS
  • Share:

Infineon Technologies AUIRF3710ZS

Manufacturer No:
AUIRF3710ZS
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRF3710ZS Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 59A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
547

Please send RFQ , we will respond immediately.

Similar Products

Part Number AUIRF3710ZS AUIRF3710Z  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 59A (Tc) 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 35A, 10V 18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 160W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package PG-TO263-3 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

Related Product By Categories

RJK0393DPA-00#J53
RJK0393DPA-00#J53
Renesas Electronics America Inc
MOSFET N-CH 30V 40A 8WPAK
BTS112A
BTS112A
Infineon Technologies
N-CHANNEL POWER MOSFET
SI7461DP-T1-E3
SI7461DP-T1-E3
Vishay Siliconix
MOSFET P-CH 60V 8.6A PPAK SO-8
IPB010N06NATMA1
IPB010N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 45A/180A TO263-7
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
STD45NF75T4
STD45NF75T4
STMicroelectronics
MOSFET N-CH 75V 40A DPAK
ISC022N10NM6ATMA1
ISC022N10NM6ATMA1
Infineon Technologies
TRENCH >=100V PG-TSON-8
SI1401EDH-T1-GE3
SI1401EDH-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 4A SC70-6
AUIRFP4568
AUIRFP4568
Infineon Technologies
MOSFET N-CH 150V 171A TO247AC
NVMFS5C406NLWFT1G
NVMFS5C406NLWFT1G
onsemi
MOSFET N-CH 40V 53A/362A 5DFN
2N7002WT3G
2N7002WT3G
onsemi
MOSFET N-CH 60V 310MA SC70-3
AO4449_DELTA
AO4449_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 7A 8SOIC

Related Product By Brand

BSZ100N06NSATMA1
BSZ100N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 40A TSDSON
IPF09N03LA
IPF09N03LA
Infineon Technologies
MOSFET N-CH 25V 50A TO252-3
FZ2400R17HE4PB9HPSA1
FZ2400R17HE4PB9HPSA1
Infineon Technologies
IGBT MODULE 1700V 2400A
IKQ75N120CT2XKSA1
IKQ75N120CT2XKSA1
Infineon Technologies
IGBT 1200V 150A TO247-3
AUIPS1041LTR
AUIPS1041LTR
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223
BSC014N04LST
BSC014N04LST
Infineon Technologies
BSC014N04 - 12V-300V N-CHANNEL P
CY29976AXI
CY29976AXI
Infineon Technologies
IC CLK ZDB 12OUT 125MHZ 52LQFP
CY29946AXC
CY29946AXC
Infineon Technologies
IC CLK BUFFER 2:10 200MHZ 32TQFP
MB9BF568NBGL-GE1
MB9BF568NBGL-GE1
Infineon Technologies
IC MCU 32BIT 1.03125MB 112FBGA
S6E2C28H0AGV20000
S6E2C28H0AGV20000
Infineon Technologies
IC MCU 32BIT 1MB FLASH 144LQFP
CY7C421-20JXCT
CY7C421-20JXCT
Infineon Technologies
IC ASYNC FIFO MEM 512X9 32-PLCC
CY7C1545V18-375BZC
CY7C1545V18-375BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA