AUIRF1010ZL
  • Share:

Infineon Technologies AUIRF1010ZL

Manufacturer No:
AUIRF1010ZL
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
AUIRF1010ZL Datasheet
ECAD Model:
-
Description:
AUIRF1010 - 55V-60V N-CHANNEL AU
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2840 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$1.21
497

Please send RFQ , we will respond immediately.

Similar Products

Part Number AUIRF1010ZL AUIRF1010ZS   AUIRF1010Z  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V -
Rds On (Max) @ Id, Vgs 7.5mOhm @ 75A, 10V 7.5mOhm @ 75A, 10V 7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 95 nC @ 10 V 95 nC @ 10 V
Vgs (Max) - ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 25 V 2840 pF @ 25 V 2840 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 140W (Tc) 140W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package TO-262 PG-TO263-3 TO-220AB
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

Related Product By Categories

SSM3K56CT,L3F
SSM3K56CT,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 800MA CST3
UPA2737GR-E1-AX
UPA2737GR-E1-AX
Renesas Electronics America Inc
MOSFET P-CH 30V 11A 8SOP
BUZ111SL-E3045A
BUZ111SL-E3045A
Infineon Technologies
N-CHANNEL POWER MOSFET
NTTFS3D7N06HLTWG
NTTFS3D7N06HLTWG
onsemi
MOSFET N-CH 60V 16A/103A 8PQFN
MCM1206-TP
MCM1206-TP
Micro Commercial Co
MOSFET P-CH 12V 6A DFN2020-6J
IPB100N10S305ATMA1
IPB100N10S305ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TO263-3
IRLR024TRR
IRLR024TRR
Vishay Siliconix
MOSFET N-CH 60V 14A DPAK
FQB3N80TM
FQB3N80TM
onsemi
MOSFET N-CH 800V 3A D2PAK
SI7102DN-T1-GE3
SI7102DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 12V 35A PPAK1212-8
IRFR5505GTRPBF
IRFR5505GTRPBF
Infineon Technologies
MOSFET P-CH 55V 18A DPAK
STP6N52K3
STP6N52K3
STMicroelectronics
MOSFET N-CH 525V 5A TO220
AOB10T60PL
AOB10T60PL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 10A TO263

Related Product By Brand

BAT1706WH6327XTSA1
BAT1706WH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT323-3
SMBT3906SE6327
SMBT3906SE6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX51E6327
BCX51E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
IRLR2905ZPBF
IRLR2905ZPBF
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
IRFH3707TR2PBF
IRFH3707TR2PBF
Infineon Technologies
MOSFET N-CH 30V 12A/29A 8PQFN
IPW60R330P6FKSA1
IPW60R330P6FKSA1
Infineon Technologies
MOSFET N-CH 600V 12A TO247-3
IPP50R199CPHKSA1
IPP50R199CPHKSA1
Infineon Technologies
MOSFET N-CH 550V 17A TO220-3
IRS2807DSTRPBF
IRS2807DSTRPBF
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 8SOIC
IR3827MTR1PBF
IR3827MTR1PBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 6A 17PQFN
CY29949AXCT
CY29949AXCT
Infineon Technologies
IC CLK BUFFER 1:15 200MHZ 52TQFP
CY7C1312KV18-250BZI
CY7C1312KV18-250BZI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
CY14B101LA-SZ25XIT
CY14B101LA-SZ25XIT
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC