AIDW30S65C5XKSA1
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Infineon Technologies AIDW30S65C5XKSA1

Manufacturer No:
AIDW30S65C5XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
AIDW30S65C5XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 30A TO247
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):30A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 30 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:120 µA @ 650 V
Capacitance @ Vr, F:860pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-41
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number AIDW30S65C5XKSA1 AIDW40S65C5XKSA1   AIDW10S65C5XKSA1   AIDW20S65C5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 30A (DC) 40A (DC) 10A (DC) 20A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 30 A 1.7 V @ 40 A 1.7 V @ 10 A 1.7 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 120 µA @ 650 V 120 µA @ 650 V 60 µA @ 650 V 120 µA @ 650 V
Capacitance @ Vr, F 860pF @ 1V, 1MHz 1138pF @ 1V, 1MHz 303pF @ 1V, 1MHz 584pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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