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| Part Number | AIDW10S65C5XKSA1 | AIDW20S65C5XKSA1 | AIDW30S65C5XKSA1 | AIDW12S65C5XKSA1 | AIDW40S65C5XKSA1 | AIDW16S65C5XKSA1 |
|---|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active | Active | Active |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) | 10A (DC) | 20A (DC) | 30A (DC) | 12A (DC) | 40A (DC) | 16A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A | 1.7 V @ 20 A | 1.7 V @ 30 A | 1.7 V @ 12 A | 1.7 V @ 40 A | 1.7 V @ 16 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V | 120 µA @ 650 V | 120 µA @ 650 V | 70 µA @ 650 V | 120 µA @ 650 V | 90 µA @ 650 V |
| Capacitance @ Vr, F | 303pF @ 1V, 1MHz | 584pF @ 1V, 1MHz | 860pF @ 1V, 1MHz | 363pF @ 1V, 1MHz | 1138pF @ 1V, 1MHz | 471pF @ 1V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 | PG-TO247-3-41 | PG-TO247-3-41 | PG-TO247-3-41 | PG-TO247-3-41 | PG-TO247-3-41 |
| Operating Temperature - Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
