Infineon Technologies-94-3250 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 7V
Rds On (Max) @ Id, Vgs:	11.5mOhm @ 12A, 7V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	26 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	2270 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.3W (Ta), 42W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DIRECTFET™ MQ
Package / Case:	DirectFET™ Isometric MQ

Infineon Technologies 94-3250