94-2110
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Infineon Technologies 94-2110

Manufacturer No:
94-2110
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
94-2110 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 162A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:162A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7360 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number 94-2110 94-2310   94-2113  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 100 V 30 V
Current - Continuous Drain (Id) @ 25°C 162A (Tc) 17A (Tc) 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 95A, 10V 100mOhm @ 9A, 10V 7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 34 nC @ 5 V 60 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 7360 pF @ 25 V 800 pF @ 25 V 3290 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 79W (Tc) 3.8W (Ta), 180W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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