2ED2101S06FXUMA1
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Infineon Technologies 2ED2101S06FXUMA1

Manufacturer No:
2ED2101S06FXUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
2ED2101S06FXUMA1 Datasheet
ECAD Model:
-
Description:
LEVEL SHIFT SOI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:High-Side and Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:1.1V, 1.7V
Current - Peak Output (Source, Sink):290mA, 700mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):650 V
Rise / Fall Time (Typ):70ns, 35ns
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:PG-DSO-8-69
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$1.48
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Part Number 2ED2101S06FXUMA1 2ED2106S06FXUMA1   2ED2109S06FXUMA1   2ED21091S06FXUMA1   2ED2108S06FXUMA1   2ED2181S06FXUMA1   2ED2103S06FXUMA1   2ED2104S06FXUMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Active
Driven Configuration High-Side and Low-Side High-Side and Low-Side Half-Bridge High-Side and Low-Side Half-Bridge High-Side or Low-Side Half-Bridge Half-Bridge
Channel Type Independent Independent Synchronous Independent Synchronous Synchronous Independent Independent
Number of Drivers 2 2 1 2 1 1 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 1.1V, 1.7V 1.1V, 1.7V 1.1V, 1.7V 1.1V, 1.7V 1.1V, 1.7V 1.1V, 1.7V 1.1V, 1.7V 1.1V, 1.7V
Current - Peak Output (Source, Sink) 290mA, 700mA 290mA, 700mA 290mA, 700mA 290mA, 700mA 290mA, 700mA 2.5A, 2.5A 290mA, 700mA 290mA, 700mA
Input Type Non-Inverting CMOS, TTL Non-Inverting - Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 650 V 675 V 650 V 20 V 650 V 650 V 650 V 650 V
Rise / Fall Time (Typ) 70ns, 35ns 100ns, 35ns 100ns, 35ns 100ns, 35ns 100ns, 35ns 15ns, 15ns 70ns, 35ns 70ns, 35ns
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8-69 PG-DSO-8-69 PG-DSO-8-53 PG-DSO-8 PG-DSO-8-53 PG-DSO-8-53 PG-DSO-8-69 PG-DSO-8-69

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