1EDN7511BXUSA1
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Infineon Technologies 1EDN7511BXUSA1

Manufacturer No:
1EDN7511BXUSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
1EDN7511BXUSA1 Datasheet
ECAD Model:
-
Description:
IC GATE DRV HALF BRD/LOW SOT23-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Half-Bridge, Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:N-Channel, P-Channel MOSFET
Voltage - Supply:4.5V ~ 20V
Logic Voltage - VIL, VIH:1.2V, 1.9V
Current - Peak Output (Source, Sink):4A, 8A
Input Type:Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):6.5ns, 4.5ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6
Supplier Device Package:PG-SOT23-6-2
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In Stock

$1.04
640

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Similar Products

Part Number 1EDN7511BXUSA1 1EDN8511BXUSA1   1EDN7511BXTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Discontinued at Digi-Key
Driven Configuration Half-Bridge, Low-Side Half-Bridge, Low-Side Low-Side
Channel Type Single Single Single
Number of Drivers 1 1 1
Gate Type N-Channel, P-Channel MOSFET N-Channel, P-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 4.5V ~ 20V 8V ~ 20V 4.5V ~ 20V
Logic Voltage - VIL, VIH 1.2V, 1.9V 1.2V, 1.9V 1.2V, 1.9V
Current - Peak Output (Source, Sink) 4A, 8A 4A, 8A 4A, 8A
Input Type Inverting, Non-Inverting Inverting, Non-Inverting Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) - - -
Rise / Fall Time (Typ) 6.5ns, 4.5ns 6.5ns, 4.5ns -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-6 SOT-23-6 SOT-23-6
Supplier Device Package PG-SOT23-6-2 PG-SOT23-6-2 PG-SOT23-6-2

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