ZXTP2012GTA
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Diodes Incorporated ZXTP2012GTA

Manufacturer No:
ZXTP2012GTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXTP2012GTA Datasheet
ECAD Model:
-
Description:
TRANS PNP 60V 5.5A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):5.5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 500mA, 5A
Current - Collector Cutoff (Max):20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 2A, 1V
Power - Max:3 W
Frequency - Transition:120MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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$0.86
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Similar Products

Part Number ZXTP2012GTA ZXTP2012ZTA   ZXTP2014GTA   ZXTP2013GTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 5.5 A 4.3 A 4 A 5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 140 V 100 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500mA, 5A 215mV @ 500mA, 5A 360mV @ 300mA, 3A 340mV @ 400mA, 4A
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO) 20nA (ICBO) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 1V 100 @ 2A, 1V 100 @ 1A, 5V 100 @ 1A, 1V
Power - Max 3 W 2.1 W 3 W 3 W
Frequency - Transition 120MHz 120MHz 120MHz 125MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-243AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-89-3 SOT-223-3 SOT-223-3

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