Diodes Incorporated-ZXTP2012ASTZ - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	3.5 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	210mV @ 400mA, 4A
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 1V
Power - Max:	1 W
Frequency - Transition:	120MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3, Formed Leads
Supplier Device Package:	E-Line (TO-92 compatible)

Diodes Incorporated ZXTP2012ASTZ