Diodes Incorporated-ZXTNS618MCTA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN + Diode (Isolated)
Current - Collector (Ic) (Max):	4.5 A
Voltage - Collector Emitter Breakdown (Max):	20 V
Vce Saturation (Max) @ Ib, Ic:	270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max):	25nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2A, 2V
Power - Max:	3 W
Frequency - Transition:	140MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	DFN3020B-8

Diodes Incorporated ZXTNS618MCTA