Diodes Incorporated-ZXTN2010A - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4.5 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	210mV @ 200mA, 5A
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 2A, 1V
Power - Max:	1 W
Frequency - Transition:	130MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3
Supplier Device Package:	E-Line (TO-92 compatible)

Diodes Incorporated ZXTN2010A