Diodes Incorporated-ZXTDE4M832TA - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	3.5A, 2.5A
Voltage - Collector Emitter Breakdown (Max):	80V, 70V
Vce Saturation (Max) @ Ib, Ic:	325mV @ 300mA, 3.5A, 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max):	25nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 200mA, 2V / 40 @ 1.5A, 5V
Power - Max:	1W
Frequency - Transition:	160MHz, 180MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-VDFN Exposed Pad
Supplier Device Package:	8-MLP (3x2)

Diodes Incorporated ZXTDE4M832TA