Diodes Incorporated-ZXTC6718MCQTA - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	-
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 125mA, 4.5A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 200mA, 2V
Power - Max:	1.5W
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	W-DFN3020-8

Diodes Incorporated ZXTC6718MCQTA