Diodes Incorporated-ZXTC6717MCQTA - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP Complementary
Current - Collector (Ic) (Max):	4.5A, 4A
Voltage - Collector Emitter Breakdown (Max):	15V, 12V
Vce Saturation (Max) @ Ib, Ic:	310mV @ 50mA, 4.5A, 310mV @ 150mA, 4A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 200mA, 2V, 300 @ 100mA, 2V
Power - Max:	1.13W
Frequency - Transition:	120MHz, 110MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-VDFN Exposed Pad
Supplier Device Package:	W-DFN3020-8

Diodes Incorporated ZXTC6717MCQTA