Diodes Incorporated-ZXTC4591AMCQTA - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	2.5A, 2A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 500mA, 5V / 300 @ 100mA, 5V
Power - Max:	1.5W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-VDFN Exposed Pad
Supplier Device Package:	W-DFN3020-8

Diodes Incorporated ZXTC4591AMCQTA