ZXMP6A17DN8TA
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Diodes Incorporated ZXMP6A17DN8TA

Manufacturer No:
ZXMP6A17DN8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMP6A17DN8TA Datasheet
ECAD Model:
-
Description:
MOSFET 2P-CH 60V 2.7A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:2.7A
Rds On (Max) @ Id, Vgs:125mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:17.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:637pF @ 30V
Power - Max:1.81W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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$1.15
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Similar Products

Part Number ZXMP6A17DN8TA ZXMP6A18DN8TA   ZXMP3A17DN8TA   ZXMP6A16DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Standard Standard
Drain to Source Voltage (Vdss) 60V 60V 30V 60V
Current - Continuous Drain (Id) @ 25°C 2.7A 3.7A 4.4A (Ta) 3.9A (Ta)
Rds On (Max) @ Id, Vgs 125mOhm @ 2.3A, 10V 55mOhm @ 3.5A, 10V 70mOhm @ 3.2A, 10V 85mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min) 1V @ 250µA (Min) 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 10V 44nC @ 10V 8.28nC @ 5V 12.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 637pF @ 30V 1580pF @ 30V 630pF @ 15V 1021pF @ 30V
Power - Max 1.81W 1.8W 2.1W 2.15W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO 8-SO

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