ZXMP6A13GQTA
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Diodes Incorporated ZXMP6A13GQTA

Manufacturer No:
ZXMP6A13GQTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMP6A13GQTA Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 41V 60V SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
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In Stock

$0.42
1,881

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Similar Products

Part Number ZXMP6A13GQTA ZXMP6A17GQTA   ZXMP6A13GTA   ZXMP6A13FQTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type - P-Channel P-Channel P-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C - 3A (Ta) 1.7A (Ta) 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs - 125mOhm @ 2.2A, 10V 390mOhm @ 900mA, 10V 400mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id - 1V @ 250µA 1V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 17.7 nC @ 10 V 5.9 nC @ 10 V 2.9 nC @ 4.5 V
Vgs (Max) - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 637 pF @ 30 V 219 pF @ 30 V 219 pF @ 30 V
FET Feature - - - -
Power Dissipation (Max) - 2W (Ta) 2W (Ta) 625mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-23-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-236-3, SC-59, SOT-23-3

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