ZXMP4A57E6TA
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Diodes Incorporated ZXMP4A57E6TA

Manufacturer No:
ZXMP4A57E6TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMP4A57E6TA Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 2.9A SOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:833 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-26
Package / Case:SOT-23-6
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Similar Products

Part Number ZXMP4A57E6TA ZXMP4A57E6QTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta) 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 4A, 10V 80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.8 nC @ 10 V 15.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 833 pF @ 20 V 833 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-26 SOT-26
Package / Case SOT-23-6 SOT-23-6

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