ZXMP3F37N8TA
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Diodes Incorporated ZXMP3F37N8TA

Manufacturer No:
ZXMP3F37N8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMP3F37N8TA Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 6.4A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1678 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.56W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number ZXMP3F37N8TA ZXMP3F35N8TA   ZXMP3F36N8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta) 9.3A (Ta) 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 10V 12mOhm @ 12A, 10V 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.6V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31.6 nC @ 10 V 77.1 nC @ 10 V 43.9 nC @ 15 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1678 pF @ 15 V 4600 pF @ 15 V 2265 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.56W (Ta) 1.56W (Ta) 1.56W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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