ZXMP10A17E6TA
  • Share:

Diodes Incorporated ZXMP10A17E6TA

Manufacturer No:
ZXMP10A17E6TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMP10A17E6TA Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 1.3A SOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:350mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:424 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-26
Package / Case:SOT-23-6
0 Remaining View Similar

In Stock

$0.83
528

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMP10A17E6TA ZXMP10A17E6QTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 1.4A, 10V 350mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 5 V 10.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 424 pF @ 50 V 424 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-26 SOT-26
Package / Case SOT-23-6 SOT-23-6

Related Product By Categories

SSM3J15FU,LF
SSM3J15FU,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 100MA USM
AON2408
AON2408
Alpha & Omega Semiconductor Inc.
MOSFET N CH 20V 8A DFN 2X2B
MVGSF1N03LT1G
MVGSF1N03LT1G
onsemi
MOSFET N-CH 30V 1.6A SOT23
TK380A60Y,S4X
TK380A60Y,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 9.7A TO220SIS
2V7002LT1G
2V7002LT1G
onsemi
MOSFET N-CH 60V 115MA SOT23-3
IRF620STRRPBF
IRF620STRRPBF
Vishay Siliconix
MOSFET N-CH 200V 5.2A D2PAK
G70N04T
G70N04T
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
IRFR3708TR
IRFR3708TR
Infineon Technologies
MOSFET N-CH 30V 61A DPAK
SPP80N03S2L04AKSA1
SPP80N03S2L04AKSA1
Infineon Technologies
MOSFET N-CH 30V 80A TO220-3
SI3867DV-T1-E3
SI3867DV-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 3.9A 6TSOP
IRLR8113TRLPBF
IRLR8113TRLPBF
Infineon Technologies
MOSFET N-CH 30V 94A DPAK
IRF7665S2TRPBF
IRF7665S2TRPBF
Infineon Technologies
MOSFET N-CH 100V 4.1A DIRECTFET

Related Product By Brand

NX53A00007
NX53A00007
Diodes Incorporated
XTAL OSC XO LVDS SMD
MBR1040CT
MBR1040CT
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V TO220AB
ZLLS1000TA
ZLLS1000TA
Diodes Incorporated
DIODE SCHOTTKY 40V 1.16A SOT23-3
ZHCS500TC
ZHCS500TC
Diodes Incorporated
DIODE SCHOTTKY 40V 500MA SOT23-3
BZX84B2V7-7-F
BZX84B2V7-7-F
Diodes Incorporated
DIODE ZENER 2.7V 300MW SOT23
FMMT591QTA
FMMT591QTA
Diodes Incorporated
TRANS PNP 60V 1A SOT23-3
74AUP1G86FX4-7
74AUP1G86FX4-7
Diodes Incorporated
IC GATE XOR 1CH 2-INP DFN1409-6
AP3125B1KTR-G1
AP3125B1KTR-G1
Diodes Incorporated
IC OFFLINE SWITCH FLYBACK SOT26
APX810-40SAG-7
APX810-40SAG-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23-3
APX803L05-31SA-7
APX803L05-31SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AP431YG-13
AP431YG-13
Diodes Incorporated
IC VREF SHUNT ADJ 1% SOT89-3
AP1115BY28G-13
AP1115BY28G-13
Diodes Incorporated
IC REG LINEAR 2.8V 600MA SOT89-3