ZXMP10A17E6QTA
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Diodes Incorporated ZXMP10A17E6QTA

Manufacturer No:
ZXMP10A17E6QTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMP10A17E6QTA Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 1.3A SOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:350mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:424 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-26
Package / Case:SOT-23-6
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Similar Products

Part Number ZXMP10A17E6QTA ZXMP10A17E6TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 1.4A, 10V 350mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.7 nC @ 10 V 6.1 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 424 pF @ 50 V 424 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-26 SOT-26
Package / Case SOT-23-6 SOT-23-6

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