Diodes Incorporated-ZXMNS3BM832TA - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	2.9 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	314 pF @ 15 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-MLP (3x2)
Package / Case:	8-VDFN Exposed Pad

Diodes Incorporated ZXMNS3BM832TA