ZXMN6A25K
  • Share:

Diodes Incorporated ZXMN6A25K

Manufacturer No:
ZXMN6A25K
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A25K Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 7A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1063 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.11W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
352

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN6A25K ZXMN6A25G  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 3.6A, 10V 50mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.4 nC @ 10 V 20.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1063 pF @ 30 V 1063 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.11W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252-3 SOT-223-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-261-4, TO-261AA

Related Product By Categories

IXTQ14N60P
IXTQ14N60P
IXYS
MOSFET N-CH 600V 14A TO3P
ZVP4525E6TA
ZVP4525E6TA
Diodes Incorporated
MOSFET P-CH 250V 197MA SOT23-6
PJW3P06A_R2_00001
PJW3P06A_R2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IRFHM8334TRPBF-INF
IRFHM8334TRPBF-INF
Infineon Technologies
MOSFET N-CH 30V 13A/43A 8PQFN DL
RM21N650TI
RM21N650TI
Rectron USA
MOSFET N-CHANNEL 650V 21A TO220F
DMN30H4D1S-7
DMN30H4D1S-7
Diodes Incorporated
MOSFET N-CH 300V 430MA SOT23
DMP2045UFY4-7
DMP2045UFY4-7
Diodes Incorporated
MOSFET P-CH 20V 4.7A X2-DFN2015
DMPH4023SK3Q-13
DMPH4023SK3Q-13
Diodes Incorporated
MOSFET P-CH 40V 50A TO252 T&R
IRFR3910TRR
IRFR3910TRR
Infineon Technologies
MOSFET N-CH 100V 16A DPAK
APT18F60S
APT18F60S
Microsemi Corporation
MOSFET N-CH 600V 19A D3PAK
NVD6415ANT4G
NVD6415ANT4G
onsemi
MOSFET N-CH 100V 23A DPAK
ES6U3T2CR
ES6U3T2CR
Rohm Semiconductor
MOSFET N-CH 30V 1.4A WEMT6

Related Product By Brand

FW2600014
FW2600014
Diodes Incorporated
CRYSTAL 26.0000MHZ 9PF SMD
BAT54C-7-F
BAT54C-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
SBR10U200CTB
SBR10U200CTB
Diodes Incorporated
DIODE ARRAY SBR 200V 5A D2PAK
RS1KB-13-F
RS1KB-13-F
Diodes Incorporated
DIODE GEN PURP 800V 1A SMB
MURS160A-13
MURS160A-13
Diodes Incorporated
FRED GPP RECTIFIER SMAF T&R 5K
1N4755A-T
1N4755A-T
Diodes Incorporated
DIODE ZENER 43V 1W DO41
DCX144EUQ-7R-F
DCX144EUQ-7R-F
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
DZT2907A-13
DZT2907A-13
Diodes Incorporated
TRANS PNP 60V 0.6A SOT223-3
DMC2053UFDB-7
DMC2053UFDB-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
DMN3013LDG-7
DMN3013LDG-7
Diodes Incorporated
MOSFET BVDSS: 25V-30V POWERDI333
AP7343D-32W5-7
AP7343D-32W5-7
Diodes Incorporated
IC REG LINEAR 3.2V 300MA SOT25
ZLNB2013Q16TC
ZLNB2013Q16TC
Diodes Incorporated
MUX DUAL DUAL H/V TONE SW 16QSOP