ZXMN6A11ZTA
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Diodes Incorporated ZXMN6A11ZTA

Manufacturer No:
ZXMN6A11ZTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A11ZTA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 2.7A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-89-3
Package / Case:TO-243AA
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$0.81
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Similar Products

Part Number ZXMN6A11ZTA ZXMN6A11GTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V 120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.7 nC @ 10 V 5.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 40 V 330 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-89-3 SOT-223-3
Package / Case TO-243AA TO-261-4, TO-261AA

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