ZXMN6A09KQTC
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Diodes Incorporated ZXMN6A09KQTC

Manufacturer No:
ZXMN6A09KQTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A09KQTC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 11.8A TO252
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:40mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1426 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):10.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$0.78
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Similar Products

Part Number ZXMN6A09KQTC ZXMN6A09KTC  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 11.8A (Ta) 7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 7.3A, 10V 40mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1426 pF @ 30 V 1426 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 10.1W (Ta) 2.15W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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