ZXMN6A09GQTA
  • Share:

Diodes Incorporated ZXMN6A09GQTA

Manufacturer No:
ZXMN6A09GQTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A09GQTA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 5.4A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:40mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1407 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$1.77
154

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN6A09GQTA ZXMN6A09GTA   ZXMN6A08GQTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta) 5.4A (Ta) 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 8.2A, 10V 40mOhm @ 8.2A, 10V 80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.2 nC @ 10 V 24.2 nC @ 5 V 5.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1407 pF @ 40 V 1407 pF @ 40 V 459 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

FQD7N10LTM
FQD7N10LTM
onsemi
MOSFET N-CH 100V 5.8A DPAK
BSR315PH6327XTSA1
BSR315PH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 620MA SC59
IPB03N03LAG
IPB03N03LAG
Infineon Technologies
N-CHANNEL POWER MOSFET
FQP16N25
FQP16N25
onsemi
MOSFET N-CH 250V 16A TO220-3
EPC2059
EPC2059
EPC
TRANS GAN 170V DIE .009OHM
IXFA230N075T2
IXFA230N075T2
IXYS
MOSFET N-CH 75V 230A TO263
APT8030LVFRG
APT8030LVFRG
Microchip Technology
MOSFET N-CH 800V 27A TO264
BSS123LT3G
BSS123LT3G
onsemi
MOSFET N-CH 100V 170MA SOT23-3
APT50M65B2LLG
APT50M65B2LLG
Microsemi Corporation
MOSFET N-CH 500V 67A T-MAX
IRF6726MTR1PBF
IRF6726MTR1PBF
Infineon Technologies
MOSFET N-CH 30V 32A DIRECTFET
FDC633N_F095
FDC633N_F095
onsemi
MOSFET N-CH 30V 5.2A SUPERSOT6
SI4836DY-T1-E3
SI4836DY-T1-E3
Vishay Siliconix
MOSFET N-CH 12V 17A 8SO

Related Product By Brand

DESD1LIN2WSQ-7
DESD1LIN2WSQ-7
Diodes Incorporated
TVS DIODE 24VWM 50VC SOD323
SMAJ130A-13-F
SMAJ130A-13-F
Diodes Incorporated
TVS DIODE 130VWM 209VC SMA
SMF4L6.5CAQ-7
SMF4L6.5CAQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
BAV70WQ-7-F
BAV70WQ-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT323
1N5246B-T
1N5246B-T
Diodes Incorporated
DIODE ZENER 16V 500MW DO35
FCX1053ATA
FCX1053ATA
Diodes Incorporated
TRANS NPN 75V 3A SOT89-3
DMP3036SSD-13
DMP3036SSD-13
Diodes Incorporated
MOSFET 2P-CH 30V 18.0A 8-SO
BSS138DW-7-F-79
BSS138DW-7-F-79
Diodes Incorporated
DIODE
PI3EQX12908A2ZFEX
PI3EQX12908A2ZFEX
Diodes Incorporated
PCIE EQX W-QFN55100-54 T&R 3.5K
74HC126T14-13
74HC126T14-13
Diodes Incorporated
IC BUFFER NON-INVERT 6V 14TSSOP
PI74ALVTC16244A
PI74ALVTC16244A
Diodes Incorporated
IC BUF NON-INVERT 3.6V 48TSSOP
PAM3112GUA120
PAM3112GUA120
Diodes Incorporated
IC REG LINEAR 1.2V 300MA SC70-3