ZXMN6A09DN8TA
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Diodes Incorporated ZXMN6A09DN8TA

Manufacturer No:
ZXMN6A09DN8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A09DN8TA Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 60V 4.3A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:4.3A
Rds On (Max) @ Id, Vgs:40mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:1407pF @ 40V
Power - Max:1.25W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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$1.98
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Similar Products

Part Number ZXMN6A09DN8TA ZXMN6A09DN8TC   ZXMC6A09DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 4.3A 4.3A 3.9A, 3.7A
Rds On (Max) @ Id, Vgs 40mOhm @ 8.2A, 10V 40mOhm @ 8.2A, 10V 45mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 5V 24.2nC @ 5V 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V 1407pF @ 40V 1407pF @ 40V
Power - Max 1.25W 1.25W 1.8W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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