ZXMN6A09DN8TA
  • Share:

Diodes Incorporated ZXMN6A09DN8TA

Manufacturer No:
ZXMN6A09DN8TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
ZXMN6A09DN8TA Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 60V 4.3A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:4.3A
Rds On (Max) @ Id, Vgs:40mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:1407pF @ 40V
Power - Max:1.25W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
0 Remaining View Similar

In Stock

$1.98
453

Please send RFQ , we will respond immediately.

Similar Products

Part Number ZXMN6A09DN8TA ZXMN6A09DN8TC   ZXMC6A09DN8TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 4.3A 4.3A 3.9A, 3.7A
Rds On (Max) @ Id, Vgs 40mOhm @ 8.2A, 10V 40mOhm @ 8.2A, 10V 45mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 5V 24.2nC @ 5V 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V 1407pF @ 40V 1407pF @ 40V
Power - Max 1.25W 1.25W 1.8W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

Related Product By Categories

BSG0810NDIATMA1
BSG0810NDIATMA1
Infineon Technologies
MOSFET 2N-CH 25V 19A/39A 8TISON
PMDXB550UNEZ
PMDXB550UNEZ
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.59A 6DFN
SI4804CDY-T1-GE3
SI4804CDY-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 30V 8A 8SOIC
BUK7K5R6-30E,115
BUK7K5R6-30E,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 40A LFPAK56D
PMDPB55XP,115
PMDPB55XP,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3.4A 6HUSON
SI4910DY-T1-E3
SI4910DY-T1-E3
Vishay Siliconix
MOSFET 2N-CH 40V 7.6A 8-SOIC
SI6993DQ-T1-E3
SI6993DQ-T1-E3
Vishay Siliconix
MOSFET 2P-CH 30V 3.6A 8TSSOP
SI4542DY-T1-GE3
SI4542DY-T1-GE3
Vishay Siliconix
MOSFET N/P-CH 30V 8-SOIC
SI4908DY-T1-GE3
SI4908DY-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 40V 5A 8-SOIC
QH8M22TCR
QH8M22TCR
Rohm Semiconductor
QH8M22 IS THE HIGH RELIABILITY T
US6M1TR
US6M1TR
Rohm Semiconductor
MOSFET N/P-CH 30V/20V TUMT6
SP8J2TB
SP8J2TB
Rohm Semiconductor
MOSFET 2P-CH 30V 4.5A 8-SOIC

Related Product By Brand

FN2700068
FN2700068
Diodes Incorporated
XTAL OSC XO 27.0000MHZ CMOS SMD
FNA620044
FNA620044
Diodes Incorporated
XTAL OSC XO 106.2500MHZ CMOS
NX36250001
NX36250001
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
MBR20100CS2TR-G1
MBR20100CS2TR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO263
BAL99-7-F
BAL99-7-F
Diodes Incorporated
DIODE GEN PURP 75V 300MA SOT23-3
FCX458TA
FCX458TA
Diodes Incorporated
TRANS NPN 400V 0.225A SOT89-3
DDTA114WUA-7
DDTA114WUA-7
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT323
PI3EQX12802ZHEX
PI3EQX12802ZHEX
Diodes Incorporated
12G SAS3 2 PORT 4 CHANNELREDRIVE
AP2301SN-7
AP2301SN-7
Diodes Incorporated
IC PWR SWITCH P-CH 1:1 6DFN2020
APR3415CMTR-G1
APR3415CMTR-G1
Diodes Incorporated
ACDC SYNCH RECT CONT 8-SO
AH182-PG-A
AH182-PG-A
Diodes Incorporated
MAGNETIC SWITCH UNIPOLAR 3SIP
AH3763Q-W-7
AH3763Q-W-7
Diodes Incorporated
MAGNETIC SWITCH LATCH SC59